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GS74117AX FP-BGA Commercial Temp Industrial Temp Features
* Fast access time: 7, 8, 10, 12 ns * CMOS low power operation: 150/130/105/95 mA at minimum cycle time * Single 3.3 V power supply * All inputs and outputs are TTL-compatible * Byte control * Fully static operation * Industrial Temperature Option: -40 to 85C * Package: X: 6 mm x 10 mm Fine Pitch Ball Grid Array package
256K x 16 4Mb Asynchronous SRAM
1 2 3
7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS
4 5 6
Fine Pitch BGA 256K x 16 Bump Configuration
A B C D E F G H
LB DQ1 DQ3 VSS VDD DQ6 DQ8 NC
OE UB DQ2 DQ4 DQ5 DQ7 NC A12
A0 A3 A5 A17 NC A8 A10 A13
A1 A4 A6 A7 A16 A9 A11 A14
A2 CE
NC DQ16
DQ15 DQ14 DQ13 DQ12 VDD VSS
Description
The GS74117A is a high speed CMOS Static RAM organized as 262,144 words by 16 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS74117A is available in a 6 x 10 mm Fine Pitch BGA package.
DQ10 DQ11 WE A15 DQ9 NC
Pin Descriptions Symbol
A0-A17 DQ1-DQ16 CE LB UB WE OE VDD VSS NC
Package X 6 x 10 mm Bump Pitch Top View
Description
Address input Data input/output Chip enable input Lower byte enable input (DQ1 to DQ8) Upper byte enable input (DQ9 to DQ16) Write enable input Output enable input +3.3 V power supply Ground No connect
Rev: 1.02 10/2002
1/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX Block Diagram
A0 Address Input Buffer
Row Decoder
Memory Array
A17 CE WE Control OE _____ UB LB _____
Column Decoder
I/O Buffer
DQ1
DQ16
Truth Table CE
H
OE
X
WE
X
LB
X L
UB
X L H L L H L X H
DQ1 to DQ8
Not Selected Read Read High Z Write Write Not Write, High Z High Z High Z
DQ9 to DQ16
Not Selected Read High Z Read Write Not Write, High Z Write High Z High Z
VDD Current
ISB1, ISB2
L
L
H
L H L
L
X
L
L H
IDD
L L
H X
H X
X H
Note: X: "H" or "L"
Rev: 1.02 10/2002
2/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX Absolute Maximum Ratings
Parameter
Supply Voltage Input Voltage Output Voltage Allowable power dissipation Storage temperature
Symbol
VDD VIN VOUT PD TSTG
Rating
-0.5 to +4.6 -0.5 to VDD +0.5 ( 4.6 V max.) -0.5 to VDD +0.5 ( 4.6 V max.) 0.7 -55 to 150
Unit
V V V W
oC
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -7/-8/-10/-12 Input High Voltage Input Low Voltage Ambient Temperature, Commercial Range Ambient Temperature, Industrial Range
Symbol
VDD VIH VIL TAc TAI
Min
3.0 2.0 -0.3 0 -40
Typ
3.3 -- -- -- --
Max
3.6 VDD +0.3 0.8 70 85
Unit
V V V
o
C
oC
Notes: 1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns. 2. Input undershoot voltage should be greater than -2 V and not exceed 20 ns.
Rev: 1.02 10/2002
3/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX Capacitance
Parameter
Input Capacitance Output Capacitance
Symbol
CIN COUT
Test Condition
VIN = 0 V VOUT = 0 V
Max
5 7
Unit
pF pF
Notes: 1. Tested at TA = 25C, f = 1 MHz 2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
Symbol
IIL ILO VOH VOL
Test Conditions
VIN = 0 to VDD Output High Z VOUT = 0 to VDD IOH = -4 mA ILO = +4 mA
Min
- 1 uA -1 uA 2.4 --
Max
1 uA 1 uA -- 0.4 V
Power Supply Currents
Parameter Symbol Test Conditions CE VIL All other inputs VIH or VIL Min. cycle time IOUT = 0 mA CE VIH All other inputs VIH or VIL Min. cycle time CE VDD - 0.2 V All other inputs VDD - 0.2 V or 0.2 V 0 to 70C 7 ns 8 ns 10 ns 12 ns 7 ns -40 to 85C 8 ns 10 ns 12 ns Unit
Operating Supply Current
IDD
150
130
105
90
160
140
115
100
mA
Standby Current
ISB1
28
30
25
22
38
40
35
32
mA
Standby Current
ISB2
10
20
mA
Rev: 1.02 10/2002
4/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX AC Test Conditions
Parameter
Input high level Input low level Input rise time Input fall time Input reference level Output reference level Output load
Conditions
VIH = 2.4 V VIL = 0.4 V tr = 1 V/ns tf = 1 V/ns 1.4 V 1.4 V Fig. 1& 2
Output Load 1
DQ 50 VT = 1.4 V 30pF1
Output Load 2
3.3 V DQ 5pF1 589 434
Note: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Rev: 1.02 10/2002
5/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX AC Characteristics
Read Cycle
Parameter Read cycle time Address access time Chip enable access time (CE) Byte enable access time (UB, LB) Output enable to output valid (OE) Output hold from address change Chip enable to output in low Z (CE) Output enable to output in low Z (OE) Byte enable to output in low Z (UB, LB) Chip disable to output in High Z (CE) Output disable to output in High Z (OE) Byte disable to output in High Z (UB, LB) Symbol tRC tAA tAC tAB tOE tOH tLZ* tOLZ* tBLZ* tHZ* tOHZ* tBHZ* -7 Min 7 -- -- -- -- 3 3 0 0 -- -- -- Max -- 7 7 3 3 -- -- -- -- 3.5 3 3 Min 8 -- -- -- -- 3 3 0 0 -- -- -- -8 Max -- 8 8 3.5 3.5 -- -- -- -- 4 3.5 3.5 Min 10 -- -- -- -- 3 3 0 0 -- -- -- -10 Max -- 10 10 4 4 -- -- -- -- 5 4 4 Min 12 -- -- -- -- 3 3 0 0 -- -- -- -12 Max -- 12 12 5 5 -- -- -- -- 6 5 5 Unit ns ns ns ns ns ns ns ns ns ns ns ns
* These parameters are sampled and are not 100% tested.
Read Cycle 1: CE = OE = VIL, WE = VIH, UB and, or LB = VIL
tRC Address tAA tOH Data Out Previous Data Data valid
Rev: 1.02 10/2002
6/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Read Cycle 2: WE = VIH
tRC Address tAA CE tAC tLZ UB, LB OE tBLZ tOE Data Out tOLZ High impedance tAB tBHZ tOHZ Data valid tHZ
Write Cycle
Parameter Write cycle time Address valid to end of write Chip enable to end of write Byte enable to end of write Data set up time Data hold time Write pulse width Address set up time Write recovery time (WE) Write recovery time (CE) Output Low Z from end of write Write to output in High Z Symbol tWC tAW tCW tBW tDW tDH tWP tAS tWR tWR1 tWLZ* tWHZ* -7 Min 7 5 5 5 3.5 0 5 0 0 0 3 -- Max -- -- -- -- -- -- -- -- -- -- -- 3 Min 8 5.5 5.5 5.5 4 0 5.5 0 0 0 3 -- -8 Max -- -- -- -- -- -- -- -- -- -- -- 3.5 Min 10 7 7 7 4.5 0 7 0 0 0 3 -- -10 Max -- -- -- -- -- -- -- -- -- -- -- 4 Min 12 8 8 8 6 0 8 0 0 0 3 -- -12 Max -- -- -- -- -- -- -- -- -- -- -- 5 Unit ns ns ns ns ns ns ns ns ns ns ns ns
* These parameters are sampled and are not 100% tested.
Rev: 1.02 10/2002
7/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Write Cycle 1: WE control
tWC Address tAW OE tCW CE tBW UB, LB tAS WE tDW Data In tWHZ Data Out tDH Data valid tWLZ High impedance tWP tWR
Write Cycle 2: CE control
tWC Address tAW OE tAS CE tBW UB, LB tWP WE tDW Data In Data Out tDH Data valid tCW tWR1
High impedance
Rev: 1.02 10/2002
8/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Write Cycle 3: UB, LB control
tWC Address tAW OE tAS CE tBW UB, LB tWP WE tDW Data In Data Out tDH Data valid tCW tWR1
High impedance
Rev: 1.02 10/2002
9/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX Package X--6 mm x 10 mm FP-BGA D
Symbol A A1 Unit: mm 1.100.10 0.20~0.30
fb
f0.30~0.40
0.36(TYP) 10.00.05 5.25 6.00.05 3.75 0.75(TYP) 0.10
E
Pin A1 Index
c D D1 E E1
Top View
e aaa
A
c
A1
Pin A1 Index
Side View
ABCDEFGH
aaa
fb Solder Ball
1 2 3 4 5 6
e
E1
e D1
Bottom View
Rev: 1.02 10/2002
10/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
Ordering Information Part Number*
GS74117AX-7 GS74117AX-8 GS74117AX-10 GS74117AX-12 GS74117AX-7I GS74117AX-8I GS74117AX-10I GS74117AX-12I
Package
6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA 6 mm x 10 mm BGA
Access Time
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
Temp. Range
Commercial Commercial Commercial Commercial Industrial Industrial Industrial Industrial
Status
Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. For example: GS74117AX-8T
*
Rev: 1.02 10/2002
11/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX 4Mb Asynchronous Datasheet Revision History
Rev. Code: Old; New
74117A_r1 74117A_r1; 74117A_r1_01 74117A_r1_01; 74117A_r1_02
Types of Changes Format or Content
Format/Content Content Content
Page #/Revisions/Reason
* Creation of new datasheet * Updated Recommended Operating Conditions table on page 3 * Updated Read Cycle and Write Cycle AC Characteristics tables * Removed 6 ns speed bin from entire document
Rev: 1.02 10/2002
12/12
(c) 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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